lds - 0022 - 3, rev . 1 (111683) ?2011 microsemi corporation page 1 of 6 2n34 39ua thru 2n3440ua compliant npn low power silicon transistor qualified per mil -prf- 19500/3 68 qualified levels : jan, jantx , jantxv and jans description this family of 2n3439ua through 2n3440ua high - frequency, epitaxial planar transistors feature low saturation voltage. the u a package is hermetically sealed a nd provides a low profile for minimizing board height. these devices are also available in u 4 , to - 5 and to - 39 packaging. microsemi also offers numerous other transistor products to meet hi gher and lower power ratings with various switching speed requirements in both through - hole and surface- mount packages. ua package also available in : u4 package (surface mount) 2n3439u4 C 2n3440u4 to - 5 package ( long leaded) 2n3439l C 2n3440l to - 39 package (leaded) 2n3439 C 2n3440 important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 2n34 39 ua through 2n34 40 ua series. ? jan, jantx, jantxv, and jans qualifications are available per mil - prf - 19500/368. ? rohs compliant by design . ? v ce (sat) = 0.5 v @ i c = 50 ma . ? turn - on time t on = 1.0 s m ax @ i c = 20 ma, i b1 = 2.0 ma . ? turn - off time t off = 10 s m ax @ i c = 20 ma, i b1 = -i b2 = 2.0 ma . applications / benefits ? general purpose transistors for medium power applications requiring high frequency switching and low package profile. ? military and other high - reliability applications. m axim um ratings (t c = +25c unless otherwise noted) msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters / test conditions symbol 2n3439 ua 2n3440 ua unit col lector - emitter voltage v ceo 350 250 v collector - base voltage v cbo 450 300 v emitter - base voltage v ebo 7.0 v collector current i c 1.0 a total power dissipation ua @ t a = +25 c (1) @ t c = + 25 c (2) @ t sp = +25 o c (3) p d 0.8 5.0 2.0 w operating & storage junction temperature range t j , t stg - 65 to +200 c notes : 1. derate linearly @ 4.57 mw/c for t a > +25 c. 2. derate linearly @ 28.5 mw/c for t c > +25 c. 3. derate linearly @ 14 mw/c for t sp > +25 c. downloaded from: http:///
lds - 0022 - 3, rev . 1 (111683) ?2011 microsemi corporation page 2 of 6 2n34 39ua thru 2n3440ua mechanical and packaging ? case : hermetically sealed ceramic package. ? terminal s: gold plate over nickel. ? marking: manufacturer's id, d ate c ode, p art number. ? polarity: npn (see package outline). ? tape & reel option: per eia - 481. consult factory for quantities. ? w eight: 0.12 grams. ? s ee p ackage d imensions on last page. part nomenclature jan 2n3439 ua reliability level jan = jan level jantx = jantx level jantxv = jantxv level jans = jans level blank = commercial jedec type number (see electrical characteristics table) surface mount package type symbols & definitions symbol definition c ibo c ommon - base open - circuit input capacitance . c obo c ommon - base open - circuit output capacitance . i ceo c ollector cutoff current, base open . i cex c ollector cutoff current, circuit between base and emitter . i ebo e mitter cutoff current, collector open . h fe c ommon - emitter static forward current transfer ratio . v be b ase - emitter voltage, dc . v ce c ollector - emitter voltage, dc . v ceo c ollector - emitter voltage, base open . v cbo c ollector - emitter voltage, emitter open . v eb e mitter - base voltage, dc . v ebo e mitter - base voltage, collector open . downloaded from: http:///
lds - 0022 - 3, rev . 1 (111683) ?2011 microsemi corporation page 3 of 6 2n34 39ua thru 2n3440ua electrical characteristics (t a = +25c, unless otherwise noted) off character is tics parameters / test conditions symbol min. max. unit collector - emitter breakdown voltage v (br)ceo 350 250 v i c = 10 ma r bb1 = 470 ? ; v bb1 = 6 v l = 25 mh (min); f = 30 C 60 hz 2n3439 ua 2n3440 ua collector - emitter cutoff curre nt i ceo 2.0 2.0 a v ce = 300 v v ce = 200 v 2n3439 ua 2n3440 ua emitter - base cutoff current v eb = 7.0 v i ebo 10 a collector - emitter cutoff current i cex 5.0 5.0 a v ce = 450 v, v be = - 1.5 v v ce = 300 v, v be = - 1.5 v 2n3439 ua 2n3440 ua collec tor - base cutoff current i cbo 2.0 2.0 5.0 5.0 a v cb = 360 v v cb = 250 v v cb = 450 v v cb = 300 v 2n3439 ua 2n3440 ua 2n3439 ua 2n3440 ua on characteristics (1) parameters / test conditions symbol min. max. unit forward - current transfer ratio i c = 20 ma, v ce = 10 v i c = 2.0 ma, v ce = 10 v i c = 0.2 ma, v ce = 10 v h fe 40 30 10 160 collector - emitter saturation voltage i c = 50 ma, i b = 4.0 ma v ce(sat) 0.5 v base - emitter saturation voltage i c = 50 ma, i b = 4.0 ma v be(sat) 1.3 v dynam ic charac teristics parameters / test conditions symbol min. max. unit magnitude of common emitter small - signal short - circuit forward current transfer ratio i c = 10 ma, v ce = 10 v, f = 5.0 mhz |h fe | 3.0 15 forward current transfer ratio i c = 5.0 ma, v ce = 10 v, f = 1.0 khz h fe 25 output capacitance v cb = 10 v, i e = 0, 100 khz f 1.0 mhz c obo 10 pf input capacitance v cb = 5.0 v, i e = 0, 100 khz f 1.0 mhz c ibo 75 pf (1 ) pulse test: pulse width = 300 s, d uty c ycle 2.0% . downloaded from: http:///
lds - 0022 - 3, rev . 1 (111683) ?2011 microsemi corporation page 4 of 6 2n34 39ua thru 2n3440ua electrical characteristics (t a = +25c, unless otherwise noted) continued switching cha racteristics parameters / test conditions symbol min. max. unit turn - on time v cc = 200 v; i c = 20 ma, i b1 = 2.0 ma t on 1.0 s turn - off time v cc = 200 v; i c = 20 ma, i b1 = -i b2 = 2.0 ma t off 10 s safe operating area (s ee graph below and also reference test method 3053 of mil - std - 750 . ) dc tests t c = +25 c, 1 cycle, t = 1.0 s test 1 v ce = 5.0 v, i c = 1.0 a both types test 2 v ce = 350 v, i c = 14 ma 2n3439 ua test 3 v ce = 250 v, i c = 20 ma 2n3440 ua v ce C collector to emitter voltage (v) maximum safe operating graph (continuous dc) i c C collector current (ma) downloaded from: http:///
lds - 0022 - 3, rev . 1 (111683) ?2011 microsemi corporation page 5 of 6 2n34 39ua thru 2n3440ua graphs t sp ( o c ) ( solder pad ) figure 1 temperature - power derating curve notes: thermal resistance ju nction to solder pad = 70 .0 o c/w max fi nis h - alloy temp = 175.0 o c .1 10 -5 .1 10 -4 .1 10 -3 .1 10 -2 .1 10 -1 0.1 1 10 100 time (s) figure 2 maximum thermal impedance note: t c = +25 c, thermal resistance r j sp = 70 .0 c/w, pdiss = 2 w. dc operation maximum rating (w) theta ( o c /w) downloaded from: http:///
lds - 0022 - 3, rev . 1 (111683) ?2011 microsemi corporation page 6 of 6 2n34 39ua thru 2n3440ua package dimensions notes: 1. dimensions are in inches. 2. millimeters are given for general information only. 3. dimension "ch" controls the overall package thickness. when a window lid is used, dimension "ch" must increase by a minimum of .010 inch (0.254 mm) and a maximum of .040 inch (1.020 mm). 4. the corner shape (square, notch, radius, etc.) may vary at the manufacturer's option, from that shown on the drawing. 5. dimensions " lw2" minimum and "l3" minimum and the appropriate castellation length define an unobstructed three - dimensional space traversing all of the ceramic layers in which a castellation was designed. (castellations are required on bottom two layers, optional on top ceramic layer.) dimension " lw2" maximum and "l3" maximum define the maximum width and depth of the castellation at any point on its surface. measurement of these dimensions may be made prior to solder dipping. 6. the co - planarity deviation of all terminal contact points, as defined by the device seating plane, shall not exceed .006 inch (0.15mm) for solder dipped leadless chip carriers. 7. in accordance with asme y14.5m, diameters are equivalent to x symbology. dimensions symbol inches millimeters note min max min max bl 0 .215 0 .225 5.46 5.71 bl2 0 .225 5.71 bw 0 .145 0 .155 3.68 3.93 bw2 0 .155 3.93 ch 0 .061 0 .075 1.55 1.90 3 l3 0 .003 0 .0 07 0.08 0.18 5 lh 0 .029 0 .042 0.74 1.07 ll1 0 .032 0 .048 0.81 1.22 ll2 0 .072 0 .088 1.83 2.23 ls 0 .045 0 .055 1.14 1.39 lw 0 .022 0 .028 0.56 0.71 lw2 0 .006 0 .022 0.15 0.56 5 pin no. 1 2 3 4 transistor collector emitter base n/c downloaded from: http:///
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